M00300 - SEMI M3 - Specifications for Polished Monocrystalline Sapphire Substrates StdTpc-Process Chemicals - Acids Selection of various edge and

Selection of various edge and area intensive structures is crucial for isolating the nature of the defects

and having resistivity between 0

5 μm以下のシリコンフィルムを持つSIMOX（酸素の注入による分離）ウェーハの仕様のためのものである。これらの仕様は，SIMOX SOIウェーハの包括的な特性を定めている。計測されたパラメータに対する特定値は，適用のためユーザとサプライヤとの間の合意によって決定される。パラメータ，検査要領及び合格基準を定めることにより，ユーザとサプライヤは共に，一律に製品特性及び品質の要求条件を決めることができる。

注意：　本文書は、2006年、全面的に書き換えられた。

This Test Method includes several methods for canceling gravity-induced deflection which could otherwise alter the shape of the wafer

M00300 - SEMI M3 - Specifications for Polished Monocrystalline Sapphire Substrates StdTpc-Process Chemicals - Acids Selection of various edge andThis standard was technically approved by the global Silicon Wafer Committee. This edition was approved for publication by the global Audits & Reviews Subcommittee on April 25, 2007. It was available at www. semi. org in June 2007. Originally published in 1978; previously published March 2004. NOTICE: This document was balloted and approved for withdrawal in 2007. Sapphire substrates are utilized for heteroepitaxial growth of silicon films for certain