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SEMI MF95 — Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer
The method covers square and pseudo-square Si wafers for photovoltaic (PV) applications
The contents of B
1-1109 (Reapproved 0416)
Appendix 4
D00900 - SEMI D9 - FPD基板の用語 Revision:SEMI D9-0303 - Superseded SEMI MF95 — Test MethodFPD Materials and Components CommitteeJapanese FPD Materials and Components Committee2003110Japanese Regional Standards Committee20031www. semi. org200331994200111 FPD FPD Referenced SEMI Standards SEMI D3 Quality Area Specification for FPD Substrates SEMI D5 Standard Size for FPD Substrates SEMI D7 FPD Glass Substrate Surface Roughness Measurement Method SEMI D11 Specification for FPD Glass Substrate Cassettes SEMI D12 Specification for Edge