MF163000 - SEMI MF1630 - Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities StdPbc-0310 This Guide is intended to

This Guide is intended to promote interoperable application of XML in a variety of semiconductor manufacturing usage contexts

support equipment

This Document is intended to define a set of requirements to ensure interoperability of load ports and carriers without limiting innovative solutions

This Test Method is referred to as a preferred method of RF power measurement for conforming to SEMI E113

This Guide provides information about the frequency and location of sampling for those parameters that are not available from online analyzers

MF163000 - SEMI MF1630 - Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities StdPbc-0310 This Guide is intended toThis Test Method covers the determination of electrically active boron, phosphorus, arsenic, aluminum, antimony, and gallium concentration in single crystal silicon. This Test Method can be used for silicon in which the impurity dopant concentrations are between 0. 01 ppba and 5 ppba for each of the electrically active elements. The concentration for each impurity dopant can be obtained by application of Beers Law. Calibration factors are given for